Metal contacts to II-VI semiconductors: CdS and CdTe

Williams, R. H., Forsyth, N. M., Dharmadasa, I. M. and Sobiesierski, Zbigniew 1989. Metal contacts to II-VI semiconductors: CdS and CdTe. Applied Surface Science 41-2 , pp. 189-194. 10.1016/0169-4332(89)90055-X

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Abstract

Schottky barrier heights have been measured for a series of metals on atomically clean and oxidized CdS and CdTe crystals. Interface reactions have also been studied by X-ray photoemission. Conventional linear models are quite unsatisfactory to account for the barrier heights for different metals. Differences in stoichiometry at the interface are shown to influence barrier heights emphasizing the importance of defects in these systems.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Lifelong Learning Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Elsevier
ISSN:	0169-4332
Last Modified:	04 Jun 2017 02:35
URI:	https://orca.cardiff.ac.uk/id/eprint/11196

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