Gilbertson, A. M., Fearn, M., Kormányos, A., Read, Daniel ORCID: https://orcid.org/0000-0002-4178-4986, Lambert, C. J., Buckle, L., Ashley, T., Solin, S. A., Cohen, L. F., Ihm, Jisoon and Cheong, Hyeonsik 2011. Ballistic transport effects in a sub-micron InSb quantum well cross structure. Presented at: Physics of Semiconductors : 30th International Conference on the Physics of Semiconductors, Seoul, Korea, 25-30 July 2010. Published in: Ihm, J. and Cheong, H. eds. Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors, Seoul, Korea, 25-30 July 2010. AIP Conference Proceedings (1399) Melville, NY: American Institute of Physics, pp. 325-326. 10.1063/1.3666385 |
Official URL: http://dx.doi.org/10.1063/1.3666385
Abstract
We report the low temperature magnetoresistance properties of an InSb quantum well sub‐micron Hall cross with lateral dimensions of 477 nm and active device dimensions of the order of 340 nm. Ballistic transport anomalies are observed in the low field regime including negative bend resistance. The use of such devices as high spatial resolution low field sensors is addressed.
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Uncontrolled Keywords: | Magnetoresistance ; Quantum wells ; Sensors ; Electron beam lithography |
Publisher: | American Institute of Physics |
ISBN: | 9780735410022 |
ISSN: | 0094-243X |
Last Modified: | 19 Oct 2022 10:07 |
URI: | https://orca.cardiff.ac.uk/id/eprint/23299 |
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