Molecular dynamics simulation of germanium on silicon (001) substrates

Ashu, P. and Matthai, Clarence Cherian 1992. Molecular dynamics simulation of germanium on silicon (001) substrates. Applied Surface Science 56-58 (Part 2) , pp. 661-664. 10.1016/0169-4332(92)90318-R

Full text not available from this repository.

Abstract

The molecular dynamics method using an empirical potential energy function to describe the Sisingle bondGe interaction used to study the different stages of the growth of Ge on silicon (001) substrates. We have determined the minimum energy adsorption sites for single Ge adatoms and for two Ge adatoms. In addition, we have also calculated the activation energy for the Ge atoms to undergo surface diffusion. We also present results of simulations of a fraction of monolayer of Ge. The critical thickness for the stability of a pseudomorphic film of Ge is also considered.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Elsevier
ISSN:	0169-4332
Last Modified:	04 Jun 2017 06:49
URI:	https://orca.cardiff.ac.uk/id/eprint/65068

Citation Data

Cited 3 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item