An investigation of metal contacts to II–VI compounds: CdTe and CdS

Forsyth, N. M., Dharmadasa, I. M., Sobiesierski, Zbigniew and Williams, R. H. 1988. An investigation of metal contacts to II–VI compounds: CdTe and CdS. Vacuum 38 (4-5) , pp. 369-371. 10.1016/0042-207X(88)90081-4

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Abstract

Extensive investigations have been made of metal interfaces to single crystal CdS and CdTe. Schottky barrier heights have been investigated for a large number of metals on both clean and oxidized surfaces. Parallel studies of microscopic interactions at the interfaces have been carried out using a range of surface science techniques particularly photoemission. A wide range of barrier heights have been observed for different metals on CdS and CdTe and the behaviour of the two semiconductors is very similar. Conventional theories taken individually are unable to fully account for the data, but the range of barriers observed and the way they are influenced by the method of fabrication suggests that models involving interfacial defects and mixed phases are most important for these two semiconductors.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Lifelong Learning Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Elsevier
ISSN:	0042-207X
Last Modified:	04 Jun 2017 02:34
URI:	https://orca.cardiff.ac.uk/id/eprint/11183

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