A comprehensive set of simulation tools to model and design high-performance Type-II InAs/GaSb superlattice infrared detectors

Delmas, Marie ORCID: https://orcid.org/0000-0002-5895-1146, Liang, Baolai and Huffaker, Diana L. ORCID: https://orcid.org/0000-0001-5946-4481 2019. A comprehensive set of simulation tools to model and design high-performance Type-II InAs/GaSb superlattice infrared detectors. Presented at: SPIE OPTO, San Francisco, CA, USA, 2-7 February 2019. Published in: Razeghi, Manijeh ed. Proceedings Volume 10926, Quantum Sensing and Nano Electronics and Photonics XVI. SPIE, 109260G. 10.1117/12.2509480

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Abstract

In this work, the electronic band structure of the InAs/GaSb superlattice (SL) is calculated using a commercial 8-band k⸳p solver and the electrical performance of longwave nBp device structure evaluated with Atlas from Silvaco software. By taking into account an InSb interface layer and the interface matrix (formulated by P.C. Klisptein), the model can predict the measured energy band gap of different InAs/GaSb SLs having different period composition and thickness (7/4, 10/4, 12/4, 14/4 and 14/7 SLs) within an error corresponding to the ±

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Published Online
Status:	Published
Schools:	Physics and Astronomy
Publisher:	SPIE
Date of First Compliant Deposit:	7 February 2019
Date of Acceptance:	1 February 2019
Last Modified:	25 Oct 2022 13:15
URI:	https://orca.cardiff.ac.uk/id/eprint/119324

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