Investigation of influence of SiN and SiO2 passivation in gate field plate double heterojunction Al0.3Ga0.7N/GaN/Al0.04Ga0.96N high electron mobility transistors

Murugapandiyan, P., Nirmal, D., Ajayan, J., Varghese, Arathy and Ramkumar, N. 2022. Investigation of influence of SiN and SiO2 passivation in gate field plate double heterojunction Al0.3Ga0.7N/GaN/Al0.04Ga0.96N high electron mobility transistors. Silicon 14 (4) , 1421–1429. 10.1007/s12633-020-00899-z

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Abstract

This research article reports the operational characteristics of gate field plate double heterojunction (DH) high electron mobility transistors (HEMTs) using SiN (SiO2) passivation techniques. The proposed HEMT exhibits 496 (292) V breakdown voltage (VBR) for LG (gate-length) = 0.25 μm, LGD (drain-gate distance) = 3.2 μm and 1 μm field plate length HEMT. The n + GaN source/drain regions with SiN (SiO2) passivation AlGaN/GaN/AlGaN HEMT delivered 1.4 (1.3) A/mm peak drain current density (Ids), 540 (550) mS/mm gm (transconductance), fT/fMAX of 54/198 (62/252) GHz, and the sub-threshold drain leakage current of 4 × 10−13 (1 × 10−11) A/mm. The high Johnson figure of merit (JFoM = fT × VBR) of 28.76 (19.27) THz.V and excellent VBR × fMAX product of 90.27 (73.29) THz.V demonstrates the great potential of the optimized gate field plate DH-HEMTs structure for U and V band high power microwave electronics.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	Springer
ISSN:	1876-990X
Date of Acceptance:	11 December 2020
Last Modified:	06 Jan 2024 02:07
URI:	https://orca.cardiff.ac.uk/id/eprint/153916

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