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Electrical characterization of MgO tunnel barriers grown on InAs (001) epilayers

Magnus, F., Clowes, S. K., Gilbertson, A. M., Branford, W. R., Barkhoudarov, E. D., Cohen, L. F., Singh, L. J., Barber, Z. H., Blamire, M. G., Buckle, Philip Derek, Buckle, L., Ashley, T., Eustace, D. A. and McComb, D. W. 2007. Electrical characterization of MgO tunnel barriers grown on InAs (001) epilayers. Applied Physics Letters 91 (12) , 122106. 10.1063/1.2784933

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Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: contact resistance, III-V semiconductors, indium compounds, interface roughness, magnesium compounds, MIS structures, spin polarised transport, surface treatment, tunnelling
Additional Information: Pdf uploaded in accordance with publisher's policy at (accessed 20/02/2014).
Publisher: American Institute of Physics
ISSN: 0003-6951
Date of First Compliant Deposit: 30 March 2016
Last Modified: 04 Jun 2017 04:20

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