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The development of milliKelvin Si bolometers for future X-ray array devices

Zammit, C. C., Sumner, T. J., Hepburn, I. D. and Ade, Peter A. R. 1991. The development of milliKelvin Si bolometers for future X-ray array devices. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 310 (1-2) , pp. 244-248. 10.1016/0168-9002(91)91036-U

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Silicon bolometers are currently under development for milliKelvin operation; these devices are being produced using Si wafer fabrication technology. The design and performance of individual bolometers, using doped layers with a thickness in the range 0.2 to 2 μm are described. The use of epitaxial growth to replace ion implantation for improved performance is discussed. For future use in space based X-ray astronomy, such devices could be fabricated as complete one or two dimensional arrays with integrated isolation and support. The proposed fabrication method for such arrays is outlined.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QB Astronomy
Publisher: Elsevier
ISSN: 0168-9002
Last Modified: 04 Jun 2017 04:31

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