Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

Ballistic electron emission microscopy of InAs grown on GaAs(100)

Ke, Mao-long, Westwood, David, Matthai, Clarence Cherian and Williams, R. H. 1996. Ballistic electron emission microscopy of InAs grown on GaAs(100). Surface Science 352-4 , pp. 861-864. 10.1016/0039-6028(95)01288-5

Full text not available from this repository.


We report an investigation of barrier formation between InAs and GaAs interface. The barrier height has been found to decrease with the InAs thickness and the detailed variation is in accordance with the transition/relaxation of the InAs layer. Also, the transport properties at the interface have been studied, and the L valley transmission is not observed due to the requirement of lateral momentum conservation

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Heterojunctions; Metal-semiconductor interfaces; Semiconductor-semiconductor thin film structures
Publisher: Elsevier
ISSN: 0039-6028
Last Modified: 20 Dec 2017 01:55

Citation Data

Cited 2 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item Edit Item