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Electronic structure and band discontinuities in the InAs/GaAs system

Oloumi, M. and Matthai, Clarence Cherian 1990. Electronic structure and band discontinuities in the InAs/GaAs system. Journal of Physics: Condensed Matter 2 (23) , pp. 5153-5160. 10.1088/0953-8984/2/23/005

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The electronic band structures of the lattice mismatched InAs/GaAs system has been calculated for three different lattice constants using ab initio pseudopotentials. The effect of strain on the band discontinuities has been investigated with respect to the interface interlayer separation as well as the strain. The superlattice electronic structure is examined within the context of interface states and charge localisation.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IOP Publishing
ISSN: 0953-8984
Last Modified: 04 Jun 2017 06:49

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