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Electronic structure of (111)Si/Ge superlattices

Bass, J. M. and Matthai, Clarence Cherian 1990. Electronic structure of (111)Si/Ge superlattices. Journal of Physics: Condensed Matter 2 (38) , pp. 7841-7846. 10.1088/0953-8984/2/38/009

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Using ab initio pseudopotentials the authors have performed self-consistent calculations on Sin/Gen strained layer superlattices grown on a (111) silicon substrate for n=1, 2, 3 and n=6. They look at the electronic structure and find that, despite strain and folding effects, none of these superlattices have a direct gap. From charge density contours a complete localization of the upper valence band states at the Gamma point is found on the germanium sublattice for the n=6 case. Such localization does not occur for superlattices grown on (001) substrates with the same repeat distance.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QB Astronomy
Q Science > QC Physics
Publisher: IOP Publishing
ISSN: 0953-8984
Last Modified: 13 Sep 2017 10:34

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