Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage

Ziegler, Mathias, Hempel, Martin, Larsen, Henning E., Tomm, Jens W., Andersen, Peter E., Clausen, Sonnik, Elliott, Stella N. and Elsaesser, Thomas 2010. Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage. Applied Physics Letters 97 (2) , 021110. 10.1063/1.3463039

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Abstract

The early stages of catastrophic optical damage (COD) in 808 nm emitting diode lasers are mapped by simultaneously monitoring the optical emission with a 1 ns time resolution and deriving the device temperature from thermal images. COD occurs in highly localized damage regions on a 30 to 400 ns time scale which is determined by the accumulation of excess energy absorbed from the optical output. We identify regimes in which COD is avoided by the proper choice of operation parameters.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Institute of Physics
ISSN:	0003-6951
Funders:	European Commission FP7-INFRASTRUCTURES: LASERLAB-EUROPE
Last Modified:	05 Nov 2019 04:05
URI:	https://orca.cardiff.ac.uk/id/eprint/73119

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