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Low compensation impurity band photoconductors

Sirmain, G., Pasquier, S., Meny, Claude, Murray, A. G., Griffin, Matthew J., Ade, Peter A. R., Essaleh, L., Galibert, J. and Leotin, Jean 1994. Low compensation impurity band photoconductors. Presented at: Millimeter and Submillimeter Waves, San Diego, CA, 10-14 January , 1994. Published in: Afsar, Mohammed N. ed. Millimeter and Submillimeter Waves: Proceedings of the International Conference on Millimeter and Submillimeter Waves and Applications, 10-14 January 1994, San Diego, California (Proceedings of Spie). SPIE , vol. 2211. Bellingham, WA: Society of Photo-optical Instrumentation Engineers, pp. 634-648. 10.1117/12.183058

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Low compensation thin layer of antimony doped silicon impurity band photoconductors doped at the level 1017 - 1018 cm-3 are evaluated in moderate background photon flux in the range of 1012 s-1 with the goal to approach photon noise limitation operation in spectral ranges near 300 cm-1. Blocked impurity band photodetectors based on the same active layer geometry and thickness than the photoconductors were also implemented and measured. Spectral features including cut off wavenumbers specific to impurity band effects are investigated as a function of electric field and temperature. Spectroscopic evidence for a giant gain mechanism for photoelectrons excited from residual impurities in the blocking layer of BIB structure is found. Figures of merit of both IB and BIB elements were measured and physical mechanisms underlying the limitation of their performances are outlined.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QB Astronomy
Uncontrolled Keywords: Photoresistors ; Photons ; Silicon ; Antimony ; Photodetectors
Publisher: Society of Photo-optical Instrumentation Engineers
ISBN: 9780819415158
ISSN: 0277-786X
Last Modified: 04 Jun 2017 08:15

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