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GaN on low-resistivity silicon THz high-Q passive device technology

Eblabla, Abdalla Mohamed ORCID:, Li, Xu, Wallis, David J ORCID:, Guiney, Ivor and Elgaid, Khaled ORCID: 2017. GaN on low-resistivity silicon THz high-Q passive device technology. IEEE Transactions on Terahertz Science & Technology 7 (1) , pp. 93-97. 10.1109/TTHZ.2016.2618751
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In this paper, viable transmission media technology has been demonstrated for the first time on GaN on low-resistivity silicon) substrates (ρ <; 40 Ω·cm) at H-band frequencies (220-325 GHz). The shielded-elevated coplanar waveguide (CPW) lines employ a standard monolithic microwave integrated circuit compatible air bridge process to elevate the CPW traces above a 5-μm layer of benzocyclobutene on shielded metalized ground plates. An insertion loss of less than 2.3 dB/mm was achieved up to 325 GHz, compared with 27 dB/mm for CPW fabricated directly on the substrate. To prove the efficiency of the technology, a short-circuited stub filter with a resonant frequency of 244 GHz was used. The filter achieved an unloaded Q-factor of 28, along with an insertion loss of 0.35 dB and a return loss of - 34 dB. To our knowledge, these results are the best reported to date for GaN-based technology.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 2156-342X
Date of First Compliant Deposit: 12 February 2018
Date of Acceptance: 17 August 2016
Last Modified: 10 Dec 2023 21:58

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