GaN on low-resistivity silicon THz high-Q passive device technology

Eblabla, Abdalla Mohamed ORCID: https://orcid.org/0000-0002-5991-892X, Li, Xu, Wallis, David J ORCID: https://orcid.org/0000-0002-0475-7583, Guiney, Ivor and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 2017. GaN on low-resistivity silicon THz high-Q passive device technology. IEEE Transactions on Terahertz Science & Technology 7 (1) , pp. 93-97. 10.1109/TTHZ.2016.2618751 Item availability restricted.

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Abstract

In this paper, viable transmission media technology has been demonstrated for the first time on GaN on low-resistivity silicon) substrates (ρ <; 40 Ω·cm) at H-band frequencies (220-325 GHz). The shielded-elevated coplanar waveguide (CPW) lines employ a standard monolithic microwave integrated circuit compatible air bridge process to elevate the CPW traces above a 5-μm layer of benzocyclobutene on shielded metalized ground plates. An insertion loss of less than 2.3 dB/mm was achieved up to 325 GHz, compared with 27 dB/mm for CPW fabricated directly on the substrate. To prove the efficiency of the technology, a short-circuited stub filter with a resonant frequency of 244 GHz was used. The filter achieved an unloaded Q-factor of 28, along with an insertion loss of 0.35 dB and a return loss of - 34 dB. To our knowledge, these results are the best reported to date for GaN-based technology.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	Institute of Electrical and Electronics Engineers (IEEE)
ISSN:	2156-342X
Date of First Compliant Deposit:	12 February 2018
Date of Acceptance:	17 August 2016
Last Modified:	13 Nov 2024 07:15
URI:	https://orca.cardiff.ac.uk/id/eprint/109058

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