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application/pdfIEEEIEEE Electron Device Letters;2018;39;10;10.1109/LED.2018.2865832Ga₂O₃ MOSFETlarge signal RFpulsed RFpower added efficiency (PAE)pulsed IVPulsed Large Signal RF Performance of Field-Plated Ga<sub>2</sub>O<sub>3</sub> MOSFETsManikant SinghMichael A. CasbonMichael J. UrenJames W. PomeroyStefano DalcanaleSerge KarboyanPaul J. TaskerMan Hoi WongKohei SasakiAkito KuramataShigenobu YamakoshiMasataka HigashiwakiMartin Kuball
IEEE Electron Device Letters1572 Oct. 2018103910.1109/LED.2018.28658321575
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