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Deformed honeycomb lattices of InGaAs nanowires grown on silicon-on-insulator for photonic crystal surface-emitting lasers

Messina, Cristian, Gong, Yongkang, Abouzaid, Oumaima, Ratiu, Bogdan-Petrin, Grieb, Tim, Yan, Zhao, Rosenauer, Andreas, Oh, Sang Soon ORCID: and Li, Qiang ORCID: 2023. Deformed honeycomb lattices of InGaAs nanowires grown on silicon-on-insulator for photonic crystal surface-emitting lasers. Advanced Optical Materials 11 (5) , 2201809. 10.1002/adom.202201809

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Photonic crystals can be used to achieve high-performance surface-emitting lasers and enable novel photonic topological insulator devices. In this work, a GaAs/InGaAs heterojunction nanowire platform by selective area metalorganic vapor phase epitaxy for such applications is demonstrated. The nanowires are arranged into deformed honeycomb lattices on silicon-on-insulator substrate to exploit the quadrupolar photonic band-edge mode. Core-shell and axial heterostructures are formed with their crystalline properties studied by scanning transmission electron microscopy. Room-temperature, single mode lasing from both stretched and compressed honeycomb lattices within the telecom-O band, with lasing threshold as low as 1.25 μJ cm−2 is demonstrated. The potential of using InGaAs nanowire-based honeycomb lattices for small-divergence surface-emitting lasers and topological edge mode lasers is investigated. Finite-difference time-domain far field simulations suggest a sub-10° beam divergence can be achieved thanks to the out-of-plane diffraction.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Wiley-VCH GmbH
ISSN: 2195-1071
Funders: ngineering and Physical Sciences Research Council, European Regional Development Fund through the Welsh Government (80762-CU145 (East)), Future Compound Semiconductor Manufacturing Hub (grant number EP/P006973/1)
Date of First Compliant Deposit: 21 December 2022
Date of Acceptance: 2 December 2022
Last Modified: 04 Jul 2024 01:05

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