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Band gap engineering of In2O3 by alloying with Tl2O3

Scanlon, David O., Regoutz, Anna, Egdell, Russell G., Morgan, David John and Watson, Graeme W. 2013. Band gap engineering of In2O3 by alloying with Tl2O3. Applied Physics Letters 103 (26) , 262108. 10.1063/1.4860986

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Efficient modulation of the bandgap of In2O3 will open up a route to improved electronic properties. We demonstrate using ab initio calculations that Tl incorporation into In2O3 reduces the band gap and confirm that narrowing of the gap is observed by X-ray photoemission spectroscopy on ceramic surfaces. Incorporation of Tl does not break the symmetry of the allowed optical transitions, meaning that the doped thin films should retain optical transparency in the visible region, in combination with a lowering of the conduction band effective mass. We propose that Tl-doping may be an efficient way to increase the dopability and carrier mobility of In2O3.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Cardiff Catalysis Institute (CCI)
Subjects: Q Science > QD Chemistry
Publisher: American Institute of Physics
ISSN: 0003-6951
Last Modified: 11 Sep 2020 09:13

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