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Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells

Demenev, A. A., Kulakovskii, V. D., Schneider, C., Brodbeck, S., Kamp, M., Höfling, S., Lobanov, Sergey, Weiss, T., Gippius, N. A. and Tikhodeev, S. G. 2016. Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells. Applied Physics Letters 109 (17) , 171106. 10.1063/1.4966279

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Abstract

We report close to circularly polarized lasing at ℏω=1.473ℏω=1.473 and 1.522 eV from an AlAs/AlGaAs Bragg microcavity, with 12 GaAs quantum wells in the active region and chirally etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities is its giant optical activity, allowing to fabricate a very thin half-wave plate, with a thickness of the order of the emitted light wavelength, and to realize the monolithic control of circular polarization.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: AIP Publishing
ISSN: 00036951
Date of First Compliant Deposit: 6 September 2017
Date of Acceptance: 12 October 2016
Last Modified: 28 Oct 2017 01:30
URI: http://orca.cardiff.ac.uk/id/eprint/104398

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