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Strain compensated InGaAs/AlAs triple barrier resonant tunnelling structures for THz applications

Allford, Craig P. and Buckle, Philip D. 2017. Strain compensated InGaAs/AlAs triple barrier resonant tunnelling structures for THz applications. IEEE Transactions on Terahertz Science & Technology 7 (6) , pp. 772-779. 10.1109/TTHZ.2017.2758266

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Abstract

We report a theoretical study of InGaAs/AlAs triple barrier resonant tunnelling heterostructures which are optimised for operation in the terahertz frequency range, and compare these to current state of the art double barrier structures realised in the literature. We consider the effect of strain introduced due to the large lattice mismatch of the substrate, quantum well and potential barrier materials and describe designs with strain compensated active regions. Constraints have been imposed on the designs to minimise charge accumulation in the emitter quantum well which is often associated with more complex triple barrier structures. The use of a triple barrier structure suppresses the off resonance leakage current, thus increasing the maximum output power density, with � 3 mW�m

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 2156-342X
Funders: EPSRC
Date of First Compliant Deposit: 22 September 2017
Date of Acceptance: 21 September 2017
Last Modified: 09 Apr 2020 12:15
URI: http://orca.cardiff.ac.uk/id/eprint/104960

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