Hot-electron electroluminescence under RF operation in GaN-HEMTs: A comparison among operational classes

Brazzini, Tommaso, Casbon, Michael A. ORCID: https://orcid.org/0000-0002-8637-9888, Uren, Michael J., Tasker, Paul J. ORCID: https://orcid.org/0000-0002-6760-7830, Jung, Helmut, Blanck, Herve and Kuball, Martin 2017. Hot-electron electroluminescence under RF operation in GaN-HEMTs: A comparison among operational classes. IEEE Transactions on Electron Devices 64 (5) , pp. 2155-2160. 10.1109/TED.2017.2686782

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Abstract

Electroluminescence microscopy and spectroscopy are used to compare the average hot-electron concentration and temperature under radio frequency (RF) operation class A, class B, and class F modes. From the results obtained, class A results, on average, in the highest hot-electron concentration, while class F is the mode with the lowest concentration due to its “L”-shaped load line. The electron temperature extracted from the electroluminescence spectra is reduced with increasing RF power, reflecting the dominance of electroluminescence from the portion of the load line in the semi-on region. The electroluminescence method is not able to give substantial information on the portion of the load line with high field and low current density which will be responsible for the potentially damaging hottest electrons present in the channel.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Additional Information:	This work is licensed under a Creative Commons Attribution 4.0 License
Publisher:	Institute of Electrical and Electronics Engineers (IEEE)
ISSN:	0018-9383
Funders:	EPSRC
Date of First Compliant Deposit:	18 May 2018
Date of Acceptance:	15 March 2017
Last Modified:	04 May 2023 08:24
URI:	https://orca.cardiff.ac.uk/id/eprint/110131

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