Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704, Lai, Billy and Lau, Kei May 2017. Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer. Applied Physics Letters 111 (17) , 172103. 10.1063/1.5000100 |
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Abstract
We report epitaxial growth of GaSb nano-ridge structures and planar thin films on V-groove patterned Si (001) substrates by leveraging the aspect ratio trapping technique. GaSb was deposited on {111} Si facets of the V-shaped trenches using metal-organic chemical vapor deposition with a 7 nm GaAs growth initiation layer. Transmission electron microscopy analysis reveals the critical role of the GaAs layer in providing a U-shaped surface for subsequent GaSb epitaxy. A network of misfit dislocations was uncovered at the GaSb/GaAs hetero-interface. We studied the evolution of the lattice relaxation as the growth progresses from closely pitched GaSb ridges to coalesced thin films using x-ray diffraction. The omega rocking curve full-width-at-half-maximum of the resultant GaSb thin film is among the lowest values reported by molecular beam epitaxy, substantiating the effectiveness of the defect necking mechanism. These results thus present promising opportunities for the heterogeneous integration of devices based on 6.1A ° family compound semiconductors
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Publisher: | AIP Publishing |
ISSN: | 0003-6951 |
Funders: | the Innovation Technology Fund of Hong Kong |
Date of First Compliant Deposit: | 24 March 2018 |
Date of Acceptance: | 15 October 2017 |
Last Modified: | 05 May 2023 23:30 |
URI: | https://orca.cardiff.ac.uk/id/eprint/110160 |
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