Power and efficiency continuous modes in saturated GaN HEMT devices

Bogusz, Aleksander, Costello, Zack,, Quaglia, Roberto ORCID: https://orcid.org/0000-0003-3228-301X, Bell, James ORCID: https://orcid.org/0000-0002-4815-2199, Lees, Jonathan ORCID: https://orcid.org/0000-0002-6217-7552, Tasker, Paul ORCID: https://orcid.org/0000-0002-6760-7830 and Cripps, Stephen ORCID: https://orcid.org/0000-0002-2258-951X 2018. Power and efficiency continuous modes in saturated GaN HEMT devices. Presented at: Inmmic 2018, Brive-La-Gaillarde, France, 5- 6 July 2018.

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Abstract

This paper discusses, for the first time, the continuity of optimum load for power and efficiency in saturated GaN devices. Continuous modes are defined originally on the zerograzing voltage assumption. In this paper we show that a continuous behaviour can also be observed in saturated devices without imposing any limitation on clipping. Simulations using a simplified knee-model for the device and source-load pull experimental characterization are critically analysed and compared to describe the discovered continuum.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Completion
Status:	Unpublished
Schools:	Engineering
Related URLs:	http://www.inmmic.org/
Date of First Compliant Deposit:	22 May 2018
Last Modified:	22 Apr 2023 14:13
URI:	https://orca.cardiff.ac.uk/id/eprint/111631

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