Li, Qiang ![]() ![]() |
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Abstract
We report comparison of lasing dynamics in InAs quantum dot (QD) micro-disk lasers (MDLs) monolithically grown on V-groove patterned and planar Si (001) substrates. TEM characterizations reveal abrupt interfaces and reduced threading dislocations in the QD active regions when using the GaAs-on-V-grooved-Si template. The improved crystalline quality translates into lower threshold power in the optically pumped continuous-wave MDLs. Concurrent evaluations were also made with devices fabricated simultaneously on lattice-matched GaAs substrates. Lasing behaviors from 10 K up to room temperature have been studied systematically. The analyses spotlight insights into the optimal epitaxial scheme to achieve low-threshold lasing in telecommunication wavelengths on exact Si (001) substrates.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Publisher: | Optical Society of America |
ISSN: | 1094-4087 |
Date of First Compliant Deposit: | 25 May 2018 |
Date of Acceptance: | 21 August 2016 |
Last Modified: | 03 May 2023 07:07 |
URI: | https://orca.cardiff.ac.uk/id/eprint/111770 |
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