Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors

Hu, Yaoqiao, Yip, Pak San, Tang, Chak Wah, Lau, Kei May and Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704 2018. Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors. Semiconductor Science and Technology 33 (4) , 045005. 10.1088/1361-6641/aaa224

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Abstract

Layered semiconductor molybdenum disulfide (MoS2) has recently emerged as a promising material for flexible electronic and optoelectronic devices because of its finite bandgap and high degree of gate control. Here, we report a hydrogen fluoride (HF) passivation technique for improving the carrier mobility and interface quality of chemical vapor deposited monolayer MoS2 on a SiO2/Si substrate. After passivation, the fabricated MoS2 back-gate transistors demonstrate a more than double improvement in average electron mobility, a reduced gate hysteresis gap of 3 V, and a low interface trapped charge density of ~5.8 × 1011 cm−2. The improvements are attributed to the satisfied interface dangling bonds, thus a reduction of interface trap states and trapped charges. Surface x-ray photoelectron spectroscopy analysis and first-principles simulation were performed to verify the HF passivation effect. The results here highlight the necessity of a MoS2/dielectric passivation strategy and provides a viable route for enhancing the performance of MoS2 nano-electronic devices.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	IOP Publishing: Hybrid Open Access
ISSN:	0268-1242
Date of First Compliant Deposit:	25 May 2018
Date of Acceptance:	15 December 2017
Last Modified:	05 May 2023 11:33
URI:	https://orca.cardiff.ac.uk/id/eprint/111785

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