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Continuous-wave optically pumped 1.55 μm InAs/InAlGaAs quantum dot microdisk lasers epitaxially grown on silicon

Shi, Bei, Zhu, Si, Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704, Wan, Yating, Hu, Evelyn L. and Lau, Kei May 2018. Continuous-wave optically pumped 1.55 μm InAs/InAlGaAs quantum dot microdisk lasers epitaxially grown on silicon. ACS Photonics 4 (2) , pp. 204-210. 10.1021/acsphotonics.6b00731

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Abstract

Monolithic integration of high-performance semiconductor lasers on silicon enables wafer-scale optical interconnects within photonic integrated circuits on a silicon manufacturing platform. III–V quantum dot (QD) lasers on silicon stand out for their better device performances and reliability. QD lasers grown on III–V substrates have been integrated by wafer-bonding techniques with high quality. Direct growth of QD lasers on silicon offers an alluring alternative, using widely available large-area silicon substrates. However, to date, notable achievements have been reported only in InAs/GaAs lasers emitting at 1.3 μm, while 1.55 μm InAs/InP QD lasers on silicon remain in uncharted territory. Here we demonstrate the first 1.55 μm band InAs/InAlGaAs quantum dot microdisk lasers epitaxially grown on (001) silicon substrates. The lasing threshold for the seven-layer quantum dot microdisk laser at liquid-helium temperature is 1.6 mW under continuous optical pumping. The observed lasing is attributed to a unique combination of the high-quality QDs, small mode volume, and smooth sidewall of the microdisk structure and a well-developed InP buffer incorporating quantum dots as dislocation filters. These results thus mark a major step toward an integrated III–V-on-silicon photonics platform.

Item Type: Article
Date Type: Published Online
Status: Published
Schools: Physics and Astronomy
Publisher: American Chemical Society
ISSN: 2330-4022
Date of First Compliant Deposit: 29 May 2018
Date of Acceptance: 9 January 2017
Last Modified: 23 Oct 2022 13:49
URI: https://orca.cardiff.ac.uk/id/eprint/111836

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