Yi, Xin, Xie, Shiyu  ORCID: https://orcid.org/0000-0002-1994-5878, Liang, Baolai, Woon Lim, Leh, Zhou, Xinxin, Debnath, Mukul C., Huffaker, Diana ORCID: https://orcid.org/0000-0001-5946-4481, Hing Tan, Chee and David, John. P. R.
2018.
Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP.
Scientific Reports
8
, 9107.
10.1038/s41598-018-27507-w
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Abstract
The electron and hole avalanche multiplication characteristics have been measured in bulk AlAs0.56Sb0.44 p-i-n and n-i-p homojunction diodes, lattice matched to InP, with nominal avalanche region thicknesses of ~ 0.6 μm, 1.0 μm and 1.5 μm. From these and data from two much thinner devices, the bulk electron and hole impact ionization coefficients (α and β respectively), have been determined over an electric-field range from 220-1250 kV/cm for α and from 360-1250 kV/cm for β for the first time. The α/β ratio is found to vary from 1000 to 2 over this field range, making it the first report of a wide band-gap III-V semiconductor with ionization coefficient ratios similar to or larger than that observed in silicon.
| Item Type: | Article |
|---|---|
| Date Type: | Published Online |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Subjects: | Q Science > QC Physics |
| Publisher: | Nature Publishing Group |
| ISSN: | 2045-2322 |
| Related URLs: | |
| Date of First Compliant Deposit: | 6 June 2018 |
| Date of Acceptance: | 31 May 2018 |
| Last Modified: | 03 May 2023 07:53 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/112092 |
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