Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP

Yi, Xin, Xie, Shiyu ORCID: https://orcid.org/0000-0002-1994-5878, Liang, Baolai, Woon Lim, Leh, Zhou, Xinxin, Debnath, Mukul C., Huffaker, Diana ORCID: https://orcid.org/0000-0001-5946-4481, Hing Tan, Chee and David, John. P. R. 2018. Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP. Scientific Reports 8 , 9107. 10.1038/s41598-018-27507-w

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Abstract

The electron and hole avalanche multiplication characteristics have been measured in bulk AlAs0.56Sb0.44 p-i-n and n-i-p homojunction diodes, lattice matched to InP, with nominal avalanche region thicknesses of ~ 0.6 μm, 1.0 μm and 1.5 μm. From these and data from two much thinner devices, the bulk electron and hole impact ionization coefficients (α and β respectively), have been determined over an electric-field range from 220-1250 kV/cm for α and from 360-1250 kV/cm for β for the first time. The α/β ratio is found to vary from 1000 to 2 over this field range, making it the first report of a wide band-gap III-V semiconductor with ionization coefficient ratios similar to or larger than that observed in silicon.

Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Nature Publishing Group
ISSN:	2045-2322
Related URLs:	https://www.nature.com/srep/
Date of First Compliant Deposit:	6 June 2018
Date of Acceptance:	31 May 2018
Last Modified:	03 May 2023 07:53
URI:	https://orca.cardiff.ac.uk/id/eprint/112092

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