Fernandez-Barciela, Monica, Rocio Moure, M., Pelaez-Perez, Ana, Casbon, Michael ![]() ![]() |
Abstract
To meet state-of-the-art specs in nonlinear circuit design for high frequency transceivers, we need computational efficient and reliable active device nonlinear models. Frequency-domain behavioral formulations, like X-parameters, have proven successful in this context. In this paper these formulations are exploited, through simplifications and transformations to the admittance/impedance domains, to algebraically guide the complex nonlinear design flow, in particular, in oscillator design. In addition, analytically the transistor behavioral model bandwidth can be extended, through the enhanced frequency scalability provided by the admittance domain. Simulations and measurements, HEMT and HBT devices will be used to validate the described approaches.
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Publication |
Status: | Published |
Schools: | Engineering |
Publisher: | IEEE |
ISBN: | 978-1-5090-4375-0 |
Last Modified: | 23 Oct 2022 14:24 |
URI: | https://orca.cardiff.ac.uk/id/eprint/113585 |
Citation Data
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