Comparing FET technologies in terms of their suitability for broadband envelope tracking power amplifiers

Alt, Alexander ORCID: https://orcid.org/0000-0002-7621-4940, Chen, Peng, Alsahali, Sattam, Quaglia, Roberto ORCID: https://orcid.org/0000-0003-3228-301X, Tasker, Paul ORCID: https://orcid.org/0000-0002-6760-7830 and Lees, Jonathan ORCID: https://orcid.org/0000-0002-6217-7552 2018. Comparing FET technologies in terms of their suitability for broadband envelope tracking power amplifiers. Presented at: InMMIC, Brive La Gaillarde, 5-6 July 2018. -.

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Abstract

Envelope tracking power amplifiers (ET PAs) are one of the main contenders for future communication systems. Their operation over a wide range of supply voltages ( VD) leads to an extended set of requirements, this paper investigates a number of technologies, including Si LDMOS, GaAs pHEMT and GaN HEMT and how they behave in broadband ET PAs. The increased impact of the feedback capacitance CGD on broadband PA design in HEMT devices caused by a reduced VD is described for the first time. Analysis of the VD dependent characteristics show that GaN HEMTs can exhibit the most promising behaviour for broadband ET PAs due to their favourable output voltage dependent gain variationand their low capacitance to power ratio, so long as field plate designs are used to guarantee a favourable knee walkout.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Published Online
Status:	Published
Schools:	Engineering
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Date of First Compliant Deposit:	14 August 2018
Date of Acceptance:	15 May 2018
Last Modified:	05 Jan 2024 08:27
URI:	https://orca.cardiff.ac.uk/id/eprint/114178

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