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Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon

Liao, Mengya, Chen, Siming, Liu, Zhixin, Wang, Yi, Ponnampalam, Lalitha, Wu, Jiang, Tang, Mingchu, Shutts, Samuel, Liu, Zizhuo, Smowton, Peter, Yu, Siyuan, Seeds, Alwyn and Liu, Huiyun 2018. Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon. Photonics Research 6 (11) , pp. 1062-1066. 10.1364/PRJ.6.001062

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We report low-noise, high-performance single transverse mode 1.3 μm InAs/GaAs quantum dot lasers monolithically grown on silicon (Si) using molecular beam epitaxy. The fabricated narrow-ridge-waveguide Fabry–Perot (FP) lasers have achieved a room-temperature continuous-wave (CW) threshold current of 12.5 mA and high CW temperature tolerance up to 90°C. An ultra-low relative intensity noise of less than −150  dB/Hz is measured in the 4–16 GHz range. Using this low-noise Si-based laser, we then demonstrate 25.6 Gb/s data transmission over 13.5 km SMF-28. These low-cost FP laser devices are promising candidates to provide cost-effective solutions for use in uncooled Si photonics transmitters in inter/hyper data centers and metropolitan data links.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Optical Society of America
ISSN: 2327-9125
Date of First Compliant Deposit: 26 September 2018
Date of Acceptance: 13 September 2018
Last Modified: 15 May 2019 14:04

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