Norman, Justin, Kennedy, M. J., Selvidge, Jennifer, Li, Qiang ![]() |
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Official URL: http://dx.doi.org/10.1364/OE.25.003927
Abstract
High performance III-V lasers at datacom and telecom wavelengths on on-axis (001) Si are needed for scalable datacenter interconnect technologies. We demonstrate electrically injected quantum dot lasers grown on on-axis (001) Si patterned with {111} v-grooves lying in the [110] direction. No additional Ge buffers or substrate miscut was used. The active region consists of five InAs/InGaAs dot-in-a-well layers. We achieve continuous wave lasing with thresholds as low as 36 mA and operation up to 80°C.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Additional Information: | Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved. |
Publisher: | Optical Society of America |
ISSN: | 1094-4087 |
Date of First Compliant Deposit: | 5 October 2018 |
Date of Acceptance: | 9 February 2017 |
Last Modified: | 05 May 2023 09:02 |
URI: | https://orca.cardiff.ac.uk/id/eprint/115580 |
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