1.5 μm quantum-dot diode lasers directly grown on CMOS-standard (001) silicon

Zhu, Si, Shi, Bei, Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704 and Lau, Kei May 2018. 1.5 μm quantum-dot diode lasers directly grown on CMOS-standard (001) silicon. Applied Physics Letters 113 (22) , 221103. 10.1063/1.5055803

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Abstract

Electrically pumped on-chip C-band lasers provide additional flexibility for silicon photonics in the design of optoelectronic circuits. III–V quantum dots, benefiting from their superior optical properties and enhanced tolerance to defects, have become the active medium of choice for practical light sources monolithically grown on Si. To fully explore the potentials of integrated lasers for silicon photonics in telecommunications and datacenters, we report the realization of 1.5 μm room-temperature electrically pumped III–V quantum dot lasers epitaxially grown on complementary metal-oxide-semiconductor (CMOS)-standard (001) Si substrates without offcut. A threshold current density of 1.6 kA/cm2, a total output power exceeding 110 mW, and operation up to 80 °C under pulsed current injection have been achieved. These results arose from applying our well-developed InAs/InAlGaAs/InP QDs on low-defect-density InP-on-Si templates utilizing nano-patterned V-grooved (001) Si and InGaAs/InP dislocation filters. This demonstration marks a major advancement for future monolithic photonic integration on a large-area and cost-effective Si platform.

Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Physics and Astronomy
Publisher:	AIP Publishing
ISSN:	0003-6951
Date of First Compliant Deposit:	30 November 2018
Date of Acceptance:	8 November 2018
Last Modified:	28 Nov 2024 01:45
URI:	https://orca.cardiff.ac.uk/id/eprint/117219

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