Thorpe, Ben, Langbein, Frank  ORCID: https://orcid.org/0000-0002-3379-0323, Schirmer, Sophie and Kalna, Karol
2019.
Temperature affected non-equilibrium spin transport in nanoscale In0.3Ga0.7As transistors.
Presented at: 20th International Workshop on Computational Nanotechnology (IWCN),
Evanston, IL, USA,
20-24 May 2019.
Book of Abstracts: 20th International Workshop on Computational Nanotechnology.
Wien:
Institute for Microelectronics,
pp. 43-44.
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Abstract
Electron spin offers extraordinarily attractive possibilities in the operation of semiconductor devices thanks to the speed and low energy consumption in its control. One application and future candidate for high performance computing and memory applications with ultra-low power consumption are spin field effect transistors (SpinFETs). Originally proposed by Datta-Das, spin transport in a hot electron transistor was demonstrated. In this work, 2D finite-element quantum-corrected ensemble Monte Carlo simulation code to model a realistic nanoscale In0.3Ga0.7As MOSFET, designed on ITRS prescriptions, was augmented to incorporate electron spin-degrees of freedom and spin-orbit coupling to simulate electron spin transport in a realistic nanoscale device, specifically studying the effect of temperature.
| Item Type: | Conference or Workshop Item - published (Paper) |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Computer Science & Informatics |
| Subjects: | Q Science > QA Mathematics > QA75 Electronic computers. Computer science Q Science > QC Physics |
| Publisher: | Institute for Microelectronics |
| ISBN: | 978-3-9504738-0-3 |
| Related URLs: | |
| Date of First Compliant Deposit: | 21 February 2019 |
| Last Modified: | 16 Jun 2026 14:15 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/119766 |
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