Modelling of InP HEMTs with high indium content channels

KaIna, K., Elgaid, K. ORCID: https://orcid.org/0000-0003-3265-1097, Thayne, I. and Asenov, A. 2005. Modelling of InP HEMTs with high indium content channels. Presented at: International Conference on Indium Phosphide and Related Materials, 2005, Glasgow, 8-12 May 2005. International Conference on Indium Phosphide and Related Materials, 2005. IEEE, pp. 192-195. 10.1109/ICIPRM.2005.1517454

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Abstract

Performance of sub-100 nm InP HEMTs with various indium contents in the channel is studied using an ensemble Monte Carlo device simulator. A detail insight into the non-equilibrium electron transport in the InGaAs channel is reported.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Published Online
Status:	Published
Schools:	Engineering
Publisher:	IEEE
ISBN:	0780388917
Last Modified:	04 Nov 2022 12:18
URI:	https://orca.cardiff.ac.uk/id/eprint/122554

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