Temperature dependent behavior of the optical gain and electroabsorption modulation properties of an InAs/GaAs quantum dot epistructure

Le Boulbar, Emmanuel D., Jarvis, Lydia, Hayes, David ORCID: https://orcid.org/0000-0002-2303-1622, Shutts, Samuel ORCID: https://orcid.org/0000-0001-6751-7790, Li, Zhibo ORCID: https://orcid.org/0000-0002-6913-1426, Tang, Mingchu, Liu, Huiyun, Samani, Alireza, Smowton, Peter M. ORCID: https://orcid.org/0000-0002-9105-4842 and Abadia, Nicolas ORCID: https://orcid.org/0000-0002-7355-4245 2019. Temperature dependent behavior of the optical gain and electroabsorption modulation properties of an InAs/GaAs quantum dot epistructure. Presented at: 21st International Conference on Transparent Optical Networks ICTON 2019, Angers, France, 9-13 July 2019. 2019 21st International Conference on Transparent Optical Networks (ICTON). IEEE, pp. 1-4. 10.1109/ICTON.2019.8840542

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Abstract

In this work, the feasibility of a monolithically integrated laser and electroabsorption modulator based on the same active quantum dot epistructure is studied. The net modal gain and the absorption in the modulator were measured using the segmented contact method from 25 °C to 125 °C. The maximum of the net modal gain active region of the laser decreases from 10 cm -1 at 25 °C to 3.9 cm -1 at 125 °C. The non-optimized maximum extinction ratio of the modulator, 4.1 dB·mm -1 , is almost constant until 25 °C. The wavelengths at which the net modal gain and the change in absorption are maximum shifts with temperature by 0.04 eV.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Published Online
Status:	Published
Schools:	Physics and Astronomy
Publisher:	IEEE
Date of First Compliant Deposit:	1 July 2019
Date of Acceptance:	30 April 2019
Last Modified:	25 Nov 2022 10:37
URI:	https://orca.cardiff.ac.uk/id/eprint/123860

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