Catalyst-free selective-area metalorganic chemical vapour deposition of InGaAs/InGaP core-shell nanowire arrays

Huynh, Sa Hoang, Kim, Hyunseok, Gong, Yongkang, Azizur-Rahman, Khalifa ORCID: https://orcid.org/0000-0002-9797-0382, Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704 and Huffaker, Diana ORCID: https://orcid.org/0000-0001-5946-4481 2019. Catalyst-free selective-area metalorganic chemical vapour deposition of InGaAs/InGaP core-shell nanowire arrays. Presented at: UK Semiconductors 2019 Conference, Sheffield, United Kingdom, 10-11 July 2019.

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Abstract

III-V semiconductor nanowires (NWs) offer promising solutions for on-chip light sources in integrated photonics with small device footprint and ultra-low power consumption. Growing NWs by catalyst-free selective-area epitaxy (SAE) offers many advantages, such as the compatibility with silicon manufacturing and the capability to control NW diameter and position precisely. An array of NWs can be exploited as either a 1D or 2D photonic crystal, while every single NW operates as a vertical optical cavity, offering the flexibility for photodetector and laser designs. In this work, we demonstrate catalyst-free selective area metalorganic chemical vapour deposition (MOCVD) of InGaAs/InGaP core-shell NW arrays on patterned n-GaAs (111)B substrates, with an aim to realize high-performance avalanche photodiodes toward single photon sensing at near-infrared (NIR) wavelengths and bottom-up photonic crystal cavities. By carefully optimizing the growth parameters, the core-shell nanowires show a high uniformity in diameter (~180 nm) as well as in height (~1.6 μm), where a vertical growth yield of ~100% was obtained on large area array (50 × 50 μm2) containing approximately 5,000 NWs. Figure 1 gives a representative 30o-tilted SEM image. Micro-photoluminescence (μ-PL) spectrum at room temperature exhibits a strong emission peak at a wavelength of 1060 nm, corresponding to a 20% In composition of the InGaAs core. Furthermore, the μ-PL results reveal that the use of an In0.5Ga0.5P passivation layer is crucial to minimize the surface recombination and enhance the emission efficiency of the In0.2Ga0.8As core NWs.

Item Type:	Conference or Workshop Item (Paper)
Status:	In Press
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Date of First Compliant Deposit:	2 August 2019
Date of Acceptance:	19 May 2019
Last Modified:	06 Jan 2024 06:00
URI:	https://orca.cardiff.ac.uk/id/eprint/124632

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