Mapping the surface phase diagram of GaAs(001) using droplet epitaxy

Zheng, C. X., Hannikainen, K., Niu, Y. R. ORCID: https://orcid.org/0000-0003-0491-892X, Tersoff, J., Gomez, D., Pereiro, J. ORCID: https://orcid.org/0000-0002-2582-3498 and Jesson, D. E. ORCID: https://orcid.org/0000-0003-0897-1445 2019. Mapping the surface phase diagram of GaAs(001) using droplet epitaxy. Physical Review Materials 3 (12) , 124603. 10.1103/PhysRevMaterials.3.124603

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Abstract

We combine droplet epitaxy with low energy electron microscopy imaging techniques to map the surface phase diagram of GaAs(001). The phase patterns produced in droplet epitaxy are interpreted using a simple model which links the spatial coordinates of phase boundaries to the free energy. It is thereby possible to gain important new information on surface phase stability, based on the observed sequential order of the phases away from the droplet edge. This can be used to augment existing T=0K phase diagrams generated by density functional theory calculations. We establish the existence of a (3×6) phase, and confirm, that the controversial (6×6) phase is thermodynamically stable over a narrow range of chemical potential.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	American Physical Society
ISSN:	2475-9953
Date of First Compliant Deposit:	5 December 2019
Date of Acceptance:	3 December 2019
Last Modified:	09 May 2023 17:10
URI:	https://orca.cardiff.ac.uk/id/eprint/127355

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