InP quantum dot monolithic mode-locked lasers for ultrashort pulse generation at 735 nm

Allford, Craig P. ORCID: https://orcid.org/0000-0002-3798-9014, Li, Zhibo ORCID: https://orcid.org/0000-0002-6913-1426, Shutts, Samuel ORCID: https://orcid.org/0000-0001-6751-7790, Forrest, Adam F., Alharbi, Reem, Krysa, Andrey B., Cataluna, Maria Ana and Smowton, Peter ORCID: https://orcid.org/0000-0002-9105-4842 2019. InP quantum dot monolithic mode-locked lasers for ultrashort pulse generation at 735 nm. Presented at: European Semiconductor Laser Workshop 2019 (ESLW 2019), Tyndall National Institute, University College Cork, Cork, Ireland, 27-28 September 2019.

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Abstract

Monolithic InP/GaInP quantum dot passively mode-locked lasers are realised for the first time, emitting in the 730 nm waveband. Devices with total cavity length between 2 mm and 3.5 mm, with uncoated cleaved facets, and saturable absorber (SA) sections representing approximately 20% of the total cavity length have been found to Q-switch, mode-lock or both, depending on operating regime. The influence of bias conditions on the characteristics of lasers with a 3 mm cavity length have been explored, resulting in generation of pulses at 734.7 nm with pulse repetition rates of 12.55 GHz and pulse durations down to ≈6 ps.

Item Type:	Conference or Workshop Item (Paper)
Status:	In Press
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Funders:	EPSRC
Date of First Compliant Deposit:	6 April 2020
Date of Acceptance:	6 September 2019
Last Modified:	26 Nov 2022 13:15
URI:	https://orca.cardiff.ac.uk/id/eprint/130830

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