Optical gain and absorption of 1.55 um emitting InAs quantum dot lasers directly grown on (001) silicon

Allford, Craig ORCID: https://orcid.org/0000-0002-3798-9014, Li, Zhibo ORCID: https://orcid.org/0000-0002-6913-1426, Shutts, Samuel ORCID: https://orcid.org/0000-0001-6751-7790, Shi, B., Luo, W., Lau, Kei May and Smowton, Peter ORCID: https://orcid.org/0000-0002-9105-4842 2019. Optical gain and absorption of 1.55 um emitting InAs quantum dot lasers directly grown on (001) silicon. Presented at: European Semiconductor Laser Workshop 2019 (ESLW 2019), Tyndall National Institute, University College Cork, Cork, Ireland, 27-28 September 2019.

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Abstract

Broad-area InAs quantum dot lasers and segmented contact devices have been fabricated using monolithically grown InAs/InAlGaAs/InP active structures on nano-patterned (001) silicon substrates. The device optoelectronic properties, optical gain and absorption have been studied and compared to structures with a nominally identical active region, grown on a native indium phosphide substrate.

Item Type:	Conference or Workshop Item (Paper)
Status:	In Press
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Funders:	EPSRC
Date of First Compliant Deposit:	6 April 2020
Date of Acceptance:	6 September 2019
Last Modified:	07 Nov 2022 10:00
URI:	https://orca.cardiff.ac.uk/id/eprint/130832

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