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Critical state alignment and charge accumulation in triple barrier resonant tunnelling structures

Allford, Craig P., Buckle, Philip D. and Missous, M. 2015. Critical state alignment and charge accumulation in triple barrier resonant tunnelling structures. Presented at: Workshop on Compound Semiconductor Devices and Integrated Circuits 2015, Smolenice, Slovakia, 8-10 June 2015.

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Abstract

We report observations of resonant tunnelling features in the current-voltage (I(V)) characteristics of a series of triple barrier resonant tunnelling structures (TBRTS) due to the critical alignment of the n=1 confined states of the two quantum wells within the active region. Charge accumulation in the first QW of these structures has a significant effect on the I(V) characteristics of the resonances. A nominally symmetric TBRTS and asymmetric TBRTS, with decreasing second well widths, have been studied, with observations of charge accumulation affecting the critical alignment in both symmetric and asymmetric designs. We demonstrate that in highly asymmetric structures the critical alignment can occur coincident to the Fermi level in the emitter, and remains on resonance at higher bias than is expected due to charge accumulation in the structure. With great renewed interest in tunnelling structures for high frequency (THz) operation, the understanding of device transport and charge accumulation is critical.

Item Type: Conference or Workshop Item (Paper)
Status: In Press
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Funders: EPSRC
Date of First Compliant Deposit: 7 April 2020
Date of Acceptance: 29 April 2015
Last Modified: 07 Apr 2020 14:04
URI: http://orca.cardiff.ac.uk/id/eprint/130849

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