Faraday-cage-assisted etching of suspended gallium nitride nanostructures

Gough, Geraint P., Sobiesierski, Angela D., Shabbir, Saleem, Thomas, Stuart, Beggs, Daryl M. ORCID: https://orcid.org/0000-0002-2231-7514, Taylor, Robert A. and Bennett, Anthony J. ORCID: https://orcid.org/0000-0002-5386-3710 2020. Faraday-cage-assisted etching of suspended gallium nitride nanostructures. AIP Advances 10 (5) , 055319. 10.1063/5.0007947

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Abstract

We have developed an inductively coupled plasma etching technique using a Faraday cage to create suspended gallium-nitride devices in a single step. The angle of the Faraday cage, gas mix, and chamber condition define the angle of the etch and the cross-sectional profile, which can feature undercut angles of up to 45°. We fabricate singly- and doubly-clamped cantilevers of a triangular cross section and show that they can support single optical modes in the telecom C-band.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy Schools > Engineering
Publisher:	American Institute of Physics (AIP)
ISSN:	2158-3226
Funders:	EPSRC
Date of First Compliant Deposit:	14 May 2020
Date of Acceptance:	28 April 2020
Last Modified:	08 Jan 2025 22:18
URI:	https://orca.cardiff.ac.uk/id/eprint/131680

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