Room-temperature quantum emitter in aluminum nitride

Bishop, Samuel, Hadden, John ORCID: https://orcid.org/0000-0001-5407-6754, Alzahrani, Faris, Hekmati, Reza, Huffaker, Diana ORCID: https://orcid.org/0000-0001-5946-4481, Langbein, Wolfgang ORCID: https://orcid.org/0000-0001-9786-1023 and Bennett, Anthony ORCID: https://orcid.org/0000-0002-5386-3710 2020. Room-temperature quantum emitter in aluminum nitride. ACS Photonics 7 (7) , pp. 1636-1641. 10.1021/acsphotonics.0c00528

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Abstract

A device that is able to produce single photons is a 5 fundamental building block for a number of quantum technologies. 6 Significant progress has been made in engineering quantum emission in 7 the solid state, for instance, using semiconductor quantum dots as well 8 as defect sites in bulk and two-dimensional materials. Here we report 9 the discovery of a room-temperature quantum emitter embedded deep 10 within the band gap of aluminum nitride (AlN). Using spectral, 11 polarization, and photon-counting time-resolved measurements we 12 demonstrate bright (>105 counts s−1), pure (g2(0) < 0.2), and polarized 13 room-temperature quantum light emission from color centers in this 14 commercially important semiconductor.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Advanced Research Computing @ Cardiff (ARCCA) Engineering Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Chemical Society
ISSN:	2330-4022
Funders:	EPSRC, Royal Society, Ser Cymru -Welsh Government
Date of First Compliant Deposit:	15 June 2020
Date of Acceptance:	11 June 2020
Last Modified:	21 Jun 2024 13:17
URI:	https://orca.cardiff.ac.uk/id/eprint/132408

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