Bishop, Samuel, Hadden, John ![]() ![]() ![]() ![]() ![]() |
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Abstract
A device that is able to produce single photons is a 5 fundamental building block for a number of quantum technologies. 6 Significant progress has been made in engineering quantum emission in 7 the solid state, for instance, using semiconductor quantum dots as well 8 as defect sites in bulk and two-dimensional materials. Here we report 9 the discovery of a room-temperature quantum emitter embedded deep 10 within the band gap of aluminum nitride (AlN). Using spectral, 11 polarization, and photon-counting time-resolved measurements we 12 demonstrate bright (>105 counts s−1), pure (g2(0) < 0.2), and polarized 13 room-temperature quantum light emission from color centers in this 14 commercially important semiconductor.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Advanced Research Computing @ Cardiff (ARCCA) Engineering Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Publisher: | American Chemical Society |
ISSN: | 2330-4022 |
Funders: | EPSRC, Royal Society, Ser Cymru -Welsh Government |
Date of First Compliant Deposit: | 15 June 2020 |
Date of Acceptance: | 11 June 2020 |
Last Modified: | 08 Jan 2025 22:18 |
URI: | https://orca.cardiff.ac.uk/id/eprint/132408 |
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