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Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy

Zhuang, Q. D., Anyebe, Ezekiel A., Chen, R., Liu, H., Sanchez, Ana M., Rajpalke, Mohana K., Veal, Tim D., Wang, Z. M., Huang, Y. Z. and Sun, H. D. 2015. Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy. Nano Letters 15 (2) , pp. 1109-1116. 10.1021/nl5040946

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Abstract

For the first time, we report a complete control of crystal structure in InAs1–xSbx NWs by tuning the antimony (Sb) composition. This claim is substantiated by high-resolution transmission electron microscopy combined with photoluminescence spectroscopy. The pure InAs nanowires generally show a mixture of wurtzite (WZ) and zinc-blende (ZB) phases, where addition of a small amount of Sb (∼2–4%) led to quasi-pure WZ InAsSb NWs, while further increase of Sb (∼10%) resulted in quasi-pure ZB InAsSb NWs. This phase transition is further evidenced by photoluminescence (PL) studies, where a dominant emission associated with the coexistence of WZ and ZB phases is present in the pure InAs NWs but absent in the PL spectrum of InAs0.96Sb0.04 NWs that instead shows a band-to-band emission. We also demonstrate that the Sb addition significantly reduces the stacking fault density in the NWs. This study provides new insights on the role of Sb addition for effective control of nanowire crystal structure.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: American Chemical Society
ISSN: 1530-6984
Last Modified: 15 Jul 2021 01:07
URI: http://orca.cardiff.ac.uk/id/eprint/132411

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