Source/load-pull characterisation of GaN on Si HEMTs with data analysis targeting Doherty design

Quaglia, Roberto ORCID: https://orcid.org/0000-0003-3228-301X, Piacibello, Anna, Costanzo, Ferdinando, Giofre, Rocco, Casbon, Michael ORCID: https://orcid.org/0000-0002-8637-9888, Leblanc, Remy, Valenta, Vaclav and Camarchia, Vittorio 2020. Source/load-pull characterisation of GaN on Si HEMTs with data analysis targeting Doherty design. Presented at: 2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR), San Antonio, TX, USA, 26-29 January, 2020. 2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR). IEEE, pp. 5-8. 10.1109/PAWR46754.2020.9035999

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Abstract

This paper presents the source/load-pull characterisation of GaN HEMTs on Si substrate, with an analysis of the measurement data oriented to aid the design of Doherty power amplifiers for satellite communication applications in the 17-20 GHz band. In particular, fundamental load-pull, in both class AB and C, is used to identify the output power and efficiency contours and assess the scalability of the performance vs. device size. Second harmonic source/load-pull data is used to determine the harmonic impedance regions to avoid during matching network synthesis. The load-pull data allows to predict the optimum load modulation trajectory to be synthesised in the design phase and the associated performance in terms of efficiency, gain compression and phase distortion.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Published Online
Status:	Published
Schools:	Engineering
Publisher:	IEEE
ISBN:	9781728133584
Last Modified:	07 Nov 2022 11:17
URI:	https://orca.cardiff.ac.uk/id/eprint/135141

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