All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates

Yang, Junjie, Liu, Zizhuo, Jurczak, Pamela, Tang, Mingchu, Li, Keshuang ORCID: https://orcid.org/0000-0002-6913-1426, Pan, Shujie, Sanchez, Ana, Beanland, Richard, Zhang, Jin-Chuan, Wang, Huan, Liu, Fengqi, Li, Zhibo ORCID: https://orcid.org/0000-0002-6913-1426, Shutts, Samuel ORCID: https://orcid.org/0000-0001-6751-7790, Smowton, Peter ORCID: https://orcid.org/0000-0002-9105-4842, Chen, Siming, Seeds, Alwyn and Liu, Huiyun 2021. All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates. Journal of Physics D: Applied Physics 54 (3) , 035103. 10.1088/1361-6463/abbb49

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Abstract

A high-performance III–V quantum-dot (QD) laser monolithically grown on Si is one of the most promising candidates for commercially viable Si-based lasers. Great efforts have been made to overcome the challenges due to the heteroepitaxial growth, including threading dislocations and anti-phase boundaries, by growing a more than 2 µm thick III–V buffer layer. However, this relatively thick III–V buffer layer causes the formation of thermal cracks in III–V epi-layers, and hence a low yield of Si-based optoelectronic devices. In this paper, we demonstrate a usage of thin Ge buffer layer to replace the initial part of GaAs buffer layer on Si to reduce the overall thickness of the structure, while maintaining a low density of defects in III–V layers and hence the performance of the InAs/GaAs QD laser. A very high operating temperature of 130 °C has been demonstrated for an InAs/GaAs QD laser by this approach.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	IOP Publishing
ISSN:	0022-3727
Date of First Compliant Deposit:	26 October 2020
Date of Acceptance:	24 September 2020
Last Modified:	09 May 2023 20:09
URI:	https://orca.cardiff.ac.uk/id/eprint/135911

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