Improvement of small signal equivalent simulations for power and efficiency matching of GaN HEMTs

Quaglia, Roberto ORCID: https://orcid.org/0000-0003-3228-301X 2021. Improvement of small signal equivalent simulations for power and efficiency matching of GaN HEMTs. Electronics 10 (3) , 263. 10.3390/electronics10030263

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Abstract

In high-frequency power-amplifier design, it is common practice to approach the design of reactive matching networks using linear simulators and targeting a reflection loss limit (referenced to the target impedance). It is well known that this is only a first-pass design technique, since output power or efficiency contours do not correspond to mismatch circles. This paper presents a method to improve the accuracy of this approach in the case of matching network design for power amplifiers based on gallium nitride (GaN) technology. Equivalent mismatch circles, which lay within the power or efficiency contours targeted by the design, are analytically obtained thanks to geometrical considerations. A summary table providing the parameters to use for typical contours is provided. The technique is demonstrated on two examples of power-amplifier design on the 6–12 GHz band using the non-linear large-signal model of a GaN High Electron Mobility Transistor (HEMT).

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	MDPI Publishing
ISSN:	2079-9292
Date of First Compliant Deposit:	21 January 2021
Date of Acceptance:	18 January 2021
Last Modified:	03 May 2023 19:34
URI:	https://orca.cardiff.ac.uk/id/eprint/137833

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