Evaluation of a stacked-FET cell for high-frequency applications (invited paper)

Piacibello, Anna, Costanzo, Ferdinando, Giofré, Rocco, Quaglia, Roberto ORCID: https://orcid.org/0000-0003-3228-301X, Colantonio, Paolo, Pirola, Marco and Camarchia, Vittorio 2021. Evaluation of a stacked-FET cell for high-frequency applications (invited paper). International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 34 (5) , e2881. 10.1002/jnm.2881

PDF - Published Version Available under License Creative Commons Attribution. Download (2MB)

Abstract

This paper presents the design, electromagnetic simulation strategies and experimental characterisation of a two-stage stacked-FET cell in a 100 nm GaN on Si technology around 18.8 GHz, suited for Ka band satellite downlink applications. A good agreement is found between the electromagnetic simulations and the measured performance on the manufactured prototype, thus demonstrating that a successful voltage combining architecture can be obtained in the frequency range of interest with the selected topology, based on a symmetric fork-like connection between the transistors. This proves the effectiveness of an appropriate electromagnetic simulation set-up in correctly predicting the crosstalk, which typically affects this structure, leading to a correct stacking operation.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Additional Information:	This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited
Publisher:	John Wiley and Sons
ISSN:	0894-3370
Date of First Compliant Deposit:	28 July 2021
Date of Acceptance:	2 March 2021
Last Modified:	14 May 2023 03:19
URI:	https://orca.cardiff.ac.uk/id/eprint/142829

Citation Data

Cited 4 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item