Study of drain injected breakdown mechanisms in AlGaN/GaN-on-SiC HEMTs

Yang, Feiyuan, Singh, Manikant, Uren, Michael J., Martin, Trevor, Hirshy, Hassan, Casbon, Michael A. ORCID: https://orcid.org/0000-0002-8637-9888, Tasker, Paul J. ORCID: https://orcid.org/0000-0002-6760-7830 and Kuball, Martin 2022. Study of drain injected breakdown mechanisms in AlGaN/GaN-on-SiC HEMTs. IEEE Transactions on Electron Devices 69 (2) , pp. 525-530. 10.1109/TED.2021.3138841

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Abstract

Breakdown mechanism in 0.25- μm gate length AlGaN/GaN-on-SiC iron doped high electron mobility transistors (HEMTs) with background carbon is investigated through the drain current injection technique. The measurement results reveal that it can be divided into two distinct stages according to the gate voltage levels. The first stage of the measured drain injected breakdown is mainly due to the initiation of the punchthrough process under the gate, and the second stage of breakdown is associated with the potential barrier between the unintentionally doped (UID) GaN and the Fe doped p-type GaN buffer layer which also has a higher carbon density. The electroluminescence (EL) results suggest that the first stage shows uniform punchthrough current flow, but localized leakage current flow associated with a snapback breakdown mechanism replaces the uniform punchthrough current flow and dominates the second stage. A 2D-TCAD simulation has been implemented and shows the current paths under uniform flow conditions.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	Institute of Electrical and Electronics Engineers
ISSN:	0018-9383
Last Modified:	10 Nov 2022 10:31
URI:	https://orca.cardiff.ac.uk/id/eprint/147139

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