QCSE and carrier blocking in P-modulation doped InAs/InGaAs quantum dots

Mahoney, Joe, Smowton, Peter ORCID: https://orcid.org/0000-0002-9105-4842, Maglio, Benjamin, Jarvis, Lydia, Allford, Craig ORCID: https://orcid.org/0000-0002-3798-9014, Shutts, Samuel ORCID: https://orcid.org/0000-0001-6751-7790, Tang, Mingchu, Liu, Huiyun and Abadia Calvo, Nicolas ORCID: https://orcid.org/0000-0002-7355-4245 2021. QCSE and carrier blocking in P-modulation doped InAs/InGaAs quantum dots. Presented at: CLEO: Applications and Technology 2021, 9-14 May 2021. OSA Technical Digest. 10.1364/CLEO_AT.2021.JTU3A.167

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Abstract

The quantum confined Stark effect in InAs/InGaAs QDs using an undoped and p-modulation doped active region was investigated. Doping potentially offers more than a 3x increase in figure of merit modulator performance up to 100 C.

Item Type:	Conference or Workshop Item (Paper)
Status:	Published
Schools:	Physics and Astronomy
Last Modified:	05 Jan 2024 07:55
URI:	https://orca.cardiff.ac.uk/id/eprint/150899

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