Topological lasers with epitaxially grown InGaAs nanowires on a SOI substrate

Gong, Yongkang, Messina, Cristian, Wong, Stephan, Abouzaid, Oumaima, Ratiu, Bogdan-Petrin, Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704 and Oh, Sang Soon ORCID: https://orcid.org/0000-0003-3093-7016 2022. Topological lasers with epitaxially grown InGaAs nanowires on a SOI substrate. Presented at: Conference on Lasers and Electro-Optics, QELS_Fundamental Science 2022, San Jose, US, 15–20 May 2022. Conference on Lasers and Electro-Optics. Technical Digest Series San Jose, US: Optica Publishing Group, 10.1364/CLEO_QELS.2022.FF2C.1

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Abstract

We report a semiconductor laser based on optical cavities formed by topologically distinct honeycomb lattice photonic crystals. Topological lasers, fabricated on SOI wafers by using a selective area epitaxy method, can have edge modes and bulk modes under optical pumping.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	Optica Publishing Group
ISBN:	9781957171050
Date of First Compliant Deposit:	24 September 2022
Date of Acceptance:	23 September 2022
Last Modified:	05 Jan 2024 07:29
URI:	https://orca.cardiff.ac.uk/id/eprint/152824

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