Active region doping strategies in O-band InAs/GaAs quantum-dot lasers

Jarvis, Lydia K., Maglio, Ben, Shutts, Samuel ORCID: https://orcid.org/0000-0001-6751-7790, Li, Zhibo ORCID: https://orcid.org/0000-0002-6913-1426, Deng, Huiwen, Tang, Mingchu, Liu, Huiyun and Smowton, Peter ORCID: https://orcid.org/0000-0002-9105-4842 2022. Active region doping strategies in O-band InAs/GaAs quantum-dot lasers. Presented at: SPIE OPTO, 2022, 22-27 January 2022. Proceedings of SPIE. Society of Photo-optical Instrumentation Engineers, 10.1117/12.2614632

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Abstract

The performance of O-band InAs/GaAs quantum-dot (QD) lasers grown by molecular beam epitaxy with three different doping strategies are investigated in a temperature range 17 °C – 97 °C. We demonstrate lasers with a reduced threshold current using direct n-doping (during the dot formation) in the active region compared lasers with a nominally undoped active region. We explain results using calculations of the dot and wetting layer potentials and the electron and hole energy levels.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Published Online
Status:	Published
Schools:	Physics and Astronomy
Publisher:	Society of Photo-optical Instrumentation Engineers
ISSN:	0277-786X
Date of Acceptance:	9 March 2022
Last Modified:	05 Jan 2024 07:55
URI:	https://orca.cardiff.ac.uk/id/eprint/153506

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